| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a sapphire single crystal which generates no bubble group when the sapphire single crystal is grown.SOLUTION: In a growth furnace for growing a sapphire single crystal, which includes a crucible, a heater, and heat insulation material, a falling object from the heat insulation material is prevented by providing a shield material made of high-melting-point metal having a melting point of 2100°C or more between the heat insulation material and a side part and an upper part of the crucible. This allows manufacturing of the sapphire single crystal not having the bubble group, and a yield of a sapphire substrate from a straight barrel can be improved. |
