| 摘要 |
The present invention relates to a plasma etching device comprising; a vacuum chamber which forms a vacuum space; a vacuum control unit which controls the inner side of the vacuum chamber at a vacuum degree of an etching process; a gas supply unit which supplies etching gas to the inner side of the vacuum chamber; a cylindrical plasma cathode which is installed in the vacuum chamber to be able to rotate and generates plasma for the etching process; a power supply unit which applies power to the cylindrical plasma cathode; and a base material transfer unit which transfers a soft base material of a roll-to-roll shape to pass through a plasma etching area of the cylindrical plasma cathode. Therefore, the plasma etching device which has a simple composition and can perform a rapid and successive etching process for the soft base material is provided. |
