SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal layer in the opening of the first insulating layer; eliminating the first insulating layer; eliminating the film to be the first metal layer with the second metal layer used as a mask so as to form the first metal layer; and forming an electrode portion by covering exposed surfaces of the first metal layer and the second metal layer with a third metal layer including a metal of a smaller ionization tendency than the metal of the second metal layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first metal layer on a substrate adjacent a device element; forming a first insulating layer on the first metal layer, having an opening; forming a second metal layer in the opening of the first insulating layer; removing the first insulating layer to thereby expose regions of the first metal layer; removing exposed portions of the first metal layer using the second metal layer as a mask while leaving the portion of the first metal layer between the second metal layer and the underlying substrate; and forming an electrode portion by covering exposed surfaces of at least the second metal layer with a third metal layer including a metal having a higher oxidation resistance than the first and the second metals after removing the exposed portions of the first metal layer.