发明名称 |
Power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and manufacturing method therefor |
摘要 |
A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. |
申请公布号 |
EP2750173(A3) |
申请公布日期 |
2014.09.24 |
申请号 |
EP20140156808 |
申请日期 |
2010.09.06 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;SENJU METAL INDUSTRY CO., LTD |
发明人 |
NISHIBORI, HIROSHI;YOSHIHARA, KUNIHIRO;UESHIMA, MINORU |
分类号 |
H01L21/60;B23K35/26;C22C13/02;H01L23/373;H01L23/488;H01L25/07 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|