| 摘要 |
<p>The present invention provides a semiconductor device capable of suppressing a decrease in a withstand voltage value of a capacitive element to suppress variations in the withstand voltage value of the capacitive element even when the thickness of a main conductive film of a lower electrode increases. A step of forming a stacked film (34) serving as a lower electrode BE1, a step of forming an insulating film (38) serving as a capacitive film CIF1 on the stacked film (34), and a step of patterning the insulating film (38) and the stacked film (34) are performed. In the step of forming the stacked film (34), a film (31a) containing titanium, a film (31b) containing titanium and nitrogen, a main conductive film (32) containing aluminum, a film (33a) containing titanium, and a film (33b) containing titanium and nitrogen are sequentially formed from below. The ratio of the surface roughness of the upper surface (34a) of the stacked film (34) to the thickness of the insulating film (38) is 14% or less.</p> |
