High electron mobility transistor and method of forming the same

摘要

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A fluorine region is embedded in the second III-V compound layer under the gate electrode. A gate dielectric layer is disposed over the second III-V compound layer. The gate dielectric layer has a fluorine segment on the fluorine region and under at least a portion of the gate electrode.

主权项

1. A semiconductor structure comprising:
a first III-V compound layer; a second III-V compound layer disposed on the first III-V compound layer and different from the first III-V compound layer in composition, wherein a carrier channel is located between the first III-V compound layer and the second III-V compound layer; a source feature and a drain feature disposed on the second III-V compound layer; a gate electrode disposed over the second III-V compound layer between the source feature and the drain feature, wherein a fluorine region is embedded in the second III-V compound layer under the gate electrode; a gate dielectric layer disposed over the second III-V compound layer, the gate dielectric layer having a fluorine segment on the fluorine region and under at least a portion of the gate electrode, wherein the gate dielectric layer extends over a top surface of the source feature and the drain feature; and a dielectric cap layer, the dielectric cap layer underlying a portion of the gate dielectric layer and overlying the second III-V compound layer.