发明名称 ALD SYSTEM WITH DUAL PURGING LINE
摘要 The present invention relates to a configuration of an ALD system. The present invention is to solve a problem of contaminated or clogged outlet, so that a continuous process cannot be performed and maintenance and repair are required, that occurs when forming a material layer of atomic layers using a greatly reactive material. According to the present invention, two outlets are installed and valves are put at each of a first outlet and a second outlet, wherein only the first outlet is opened and the second outlet is closed when supplying and purging one kind of raw material gas, and only the second outlet is opened and the first outlet is closed when supplying and purging the other raw material gas that is greatly reactive. The ALD system is particularly useful when forming a ZnS layer by an atomic deposition method with a Zn precursor and H2S in a CIGS solar cell.
申请公布号 KR20140112134(A) 申请公布日期 2014.09.23
申请号 KR20130025411 申请日期 2013.03.11
申请人 PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION 发明人 KWON, SE HUN;KIM, KWANG HO;LEE, WOO JAE;JANG, SEUNG IL
分类号 H01L31/18;H01L31/042 主分类号 H01L31/18
代理机构 代理人
主权项
地址