Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate

摘要

A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer.

主权项

1. A method for manufacturing a solid-state image pick-up device, comprising the steps of:
forming photoelectric conversion elements, each of which includes a first conductive type region, in an element forming layer of a semiconductor substrate main body; forming a gettering layer on an upper layer of the element forming layer; and forming a dielectric film having a negative fixed charge on an upper layer of the gettering layer to induce a second conductive type region in a surface of the getting layer.