| 摘要 |
PROBLEM TO BE SOLVED: To solve a serious problem of the conventional excimer laser annealing system in which a crystallization rate is unstable.SOLUTION: The invention discloses a method for forming polycrystalline silicon by a high-energy radiation source. The method utilizes an excimer laser system including: at least two laser light sources 11,12 with different wavelengths; a dichroic mirror 14; a reflecting mirror 13; and a substrate 15. The dichroic mirror 14 and the reflecting mirror 13 face the laser light sources 12,11, respectively, and each of the dichroic mirror 14 and the reflecting mirror 13 forms a certain angle with laser light emitted from respective one of the laser light sources, so that the laser light vertically irradiates the substrate 15. The reflecting mirror 13 is positioned above the dichroic mirror 14, and a semiconductor thin film material is placed on the substrate 15. |
