发明名称 DEVICE WITH INTEGRATED PASSIVE COMPONENT
摘要 Semiconductor devices and methods for forming a semiconductor device are presented. The semiconductor device includes a die which includes a die substrate having first and second major surfaces. The semiconductor device includes a passive component disposed below the second major surface of the die substrate. The passive component is electrically coupled to the die through through silicon via (TSV) contacts.
申请公布号 US2014264733(A1) 申请公布日期 2014.09.18
申请号 US201313802835 申请日期 2013.03.14
申请人 GLOBALFOUNDERIES SINGAPORE PTE. LTD. 发明人 YUAN Shaoning;LU Yue Kang;LIM Yeow Kheng;TAN Juan Boon;SIAH Soh Yun
分类号 H01L49/02;H01L21/768 主分类号 H01L49/02
代理机构 代理人
主权项 1. A semiconductor device comprising: a die which includes a die substrate having first and second major surfaces; and a passive component disposed below the second major surface of the die substrate, wherein the passive component is electrically coupled to the die through through silicon via (TSV) contacts.
地址 Singapore SG