发明名称 X-RAY METROLOGY FOR CONTROL OF POLISHING
摘要 A method of controlling a polishing operation includes receiving a first measurement of a first amount of metal on a substrate made by a first x-ray monitoring system after a first metal layer is deposited on the substrate and before a second metal layer is deposited on the substrate, transferring the substrate to a carrier head of a chemical mechanical polishing apparatus the substrate after the second metal layer is deposited on the substrate, making a second measurement of a second amount of metal on the substrate with a second x-ray monitoring system in the chemical mechanical polishing apparatus, comparing the first measurement to the second measurement to determine a difference, and adjusting a polishing endpoint or a polishing parameter of the polishing apparatus based on the difference.
申请公布号 US2014273745(A1) 申请公布日期 2014.09.18
申请号 US201313830032 申请日期 2013.03.14
申请人 Applied Materials, Inc. 发明人 Swedek Boguslaw A.;Benvegnu Dominic J.;Tu Wen-Chiang
分类号 B24B37/005 主分类号 B24B37/005
代理机构 代理人
主权项 1. A method of controlling a polishing operation, comprising: receiving a first measurement of a first amount of metal on a substrate made by a first x-ray monitoring system after a first metal layer is deposited on the substrate and before a second metal layer is deposited on the substrate; transferring the substrate to a carrier head of a chemical mechanical polishing apparatus the substrate after the second metal layer is deposited on the substrate; making a second measurement of a second amount of metal on the substrate with a second x-ray monitoring system in the chemical mechanical polishing apparatus; comparing the first measurement to the second measurement to determine a difference; and adjusting a polishing endpoint or a polishing parameter of the polishing apparatus based on the difference.
地址 Santa Clara CA US