发明名称 |
X-RAY METROLOGY FOR CONTROL OF POLISHING |
摘要 |
A method of controlling a polishing operation includes receiving a first measurement of a first amount of metal on a substrate made by a first x-ray monitoring system after a first metal layer is deposited on the substrate and before a second metal layer is deposited on the substrate, transferring the substrate to a carrier head of a chemical mechanical polishing apparatus the substrate after the second metal layer is deposited on the substrate, making a second measurement of a second amount of metal on the substrate with a second x-ray monitoring system in the chemical mechanical polishing apparatus, comparing the first measurement to the second measurement to determine a difference, and adjusting a polishing endpoint or a polishing parameter of the polishing apparatus based on the difference. |
申请公布号 |
US2014273745(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313830032 |
申请日期 |
2013.03.14 |
申请人 |
Applied Materials, Inc. |
发明人 |
Swedek Boguslaw A.;Benvegnu Dominic J.;Tu Wen-Chiang |
分类号 |
B24B37/005 |
主分类号 |
B24B37/005 |
代理机构 |
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代理人 |
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主权项 |
1. A method of controlling a polishing operation, comprising:
receiving a first measurement of a first amount of metal on a substrate made by a first x-ray monitoring system after a first metal layer is deposited on the substrate and before a second metal layer is deposited on the substrate; transferring the substrate to a carrier head of a chemical mechanical polishing apparatus the substrate after the second metal layer is deposited on the substrate; making a second measurement of a second amount of metal on the substrate with a second x-ray monitoring system in the chemical mechanical polishing apparatus; comparing the first measurement to the second measurement to determine a difference; and adjusting a polishing endpoint or a polishing parameter of the polishing apparatus based on the difference. |
地址 |
Santa Clara CA US |