发明名称 SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer in which a silicon carbide layer and a silicon layer are laminated.SOLUTION: A semiconductor wafer comprises a single crystal silicon carbide layer and a single crystal silicon layer arranged above a surface of the silicon carbide layer. On the surface of the silicon carbide layer, a first semiconductor device is formed.
申请公布号 JP2014170872(A) 申请公布日期 2014.09.18
申请号 JP20130042568 申请日期 2013.03.05
申请人 TOYOTA INDUSTRIES CORP 发明人 IMAOKA ISAO
分类号 H01L21/02;H01L21/20;H01L21/3205;H01L21/768;H01L23/522;H01L25/07;H01L25/18 主分类号 H01L21/02
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