METHODS OF FORMING BARRIER LAYERS FOR CONDUCTIVE COPPER STRUCTURES

摘要

One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in at least the trench/via, after forming said barrier layer, performing at least one process operation to introduce manganese into the barrier layer and thereby define a manganese-containing barrier layer, forming a substantially pure copper-based seed layer above the manganese-containing barrier layer, depositing a bulk copper-based material above the copper-based seed layer so as to overfill the trench/via, and removing excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure.

主权项

1. A method, comprising:
forming a trench/via in a layer of insulating material; forming a barrier layer in at least said trench/via; after forming said barrier layer, performing at least one process operation to introduce manganese into said barrier layer and thereby define a manganese-containing barrier layer; forming a substantially pure copper-based seed layer above said manganese-containing barrier layer; depositing a bulk copper-based material above said substantially pure copper-based seed layer so as to overfill said trench/via; and removing excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.