发明名称 PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
摘要 An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
申请公布号 US2014268080(A1) 申请公布日期 2014.09.18
申请号 US201314139307 申请日期 2013.12.23
申请人 APPLIED MATERIALS, INC. 发明人 Beasley Cara;Hofmann Ralf;Foad Majeed;Michaelson Timothy
分类号 G03F1/24;G03F7/20 主分类号 G03F1/24
代理机构 代理人
主权项 1. An integrated extreme ultraviolet blank production system comprising: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum.
地址 Santa Clara CA US