发明名称 |
PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR |
摘要 |
An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer. |
申请公布号 |
US2014268080(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201314139307 |
申请日期 |
2013.12.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Beasley Cara;Hofmann Ralf;Foad Majeed;Michaelson Timothy |
分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
代理机构 |
|
代理人 |
|
主权项 |
1. An integrated extreme ultraviolet blank production system comprising:
a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. |
地址 |
Santa Clara CA US |