STORAGE ELEMENT AND MEMORY

摘要

A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

主权项

1. A storage element comprising:
a means for storing information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the means for storing information; a means for increasing spin pumping; and a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for causing spin pumping and the means for storing information.