USE OF A BUFFER LAYER TO FORM BACK CONTACT TO A GROUP IIB-VIA COMPOUND DEVICE

摘要

A method of making a back contact to a Group IIB-VIA compound layer employed in a device such as a solar cell and in particular a CdTe solar cell. The method involves deposition of a contact buffer layer comprising an ionic conductor over a surface of a CdTe film, which is the absorber of the solar cell. A highly conductive contact layer is deposited over the contact buffer layer. In some examples, the compound device is a device such as a solar cell and in particular a CdTe solar cell in a sub-strate configuration or structure. The method involves deposition of a contact buffer layer comprising an ionic conductor on a surface of a highly conductive contact layer. A CdTe film, which is the absorber layer of the solar cell is then deposited over the contact buffer layer.

主权项

1. A device structure comprising;
a Group IIB-VIA compound film; a contact layer; and a back contact buffer layer disposed between the Group IIB-VIA compound film and the contact layer, wherein the back contact buffer layer comprises an ionic conductor.