发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a composition from which a fine negative photoresist pattern can be formed without surface roughening, and a pattern forming method using the composition.SOLUTION: The composition for forming a fine pattern is used in a method for forming a positive resist pattern using a chemically amplified positive photoresist composition, for thinning a pattern by thickening a resist pattern. The composition comprises a polymer including an amino group in a repeating unit, a solvent, and an acid. A fine pattern can be formed by applying the above composition on a developed positive resist pattern and heating.
申请公布号 JP2014170190(A) 申请公布日期 2014.09.18
申请号 JP20130043177 申请日期 2013.03.05
申请人 AZ ELECTRONIC MATERIALS MFG CO LTD 发明人 NAGAHARA TATSURO;SEKITO TAKASHI;YAMAMOTO KAZUMA;KOBAYASHI MASAICHI;SATAKE NOBORU;ISHII MASAHIRO
分类号 G03F7/40;C08K3/28;C08K3/30;C08K5/09;C08K5/42;C08L39/00;H01L21/027 主分类号 G03F7/40
代理机构 代理人
主权项
地址