发明名称 |
COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition from which a fine negative photoresist pattern can be formed without surface roughening, and a pattern forming method using the composition.SOLUTION: The composition for forming a fine pattern is used in a method for forming a positive resist pattern using a chemically amplified positive photoresist composition, for thinning a pattern by thickening a resist pattern. The composition comprises a polymer including an amino group in a repeating unit, a solvent, and an acid. A fine pattern can be formed by applying the above composition on a developed positive resist pattern and heating. |
申请公布号 |
JP2014170190(A) |
申请公布日期 |
2014.09.18 |
申请号 |
JP20130043177 |
申请日期 |
2013.03.05 |
申请人 |
AZ ELECTRONIC MATERIALS MFG CO LTD |
发明人 |
NAGAHARA TATSURO;SEKITO TAKASHI;YAMAMOTO KAZUMA;KOBAYASHI MASAICHI;SATAKE NOBORU;ISHII MASAHIRO |
分类号 |
G03F7/40;C08K3/28;C08K3/30;C08K5/09;C08K5/42;C08L39/00;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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