TOPOGRAPHY DRIVEN OPC AND LITHOGRAPHY FLOW

摘要

Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.

主权项

1. A process for forming a device comprising:
providing a design data file of an integrated circuit (IC); performing topography analysis on the design data file, wherein the analysis includes generating topography maps for mask levels of the IC, wherein topography maps include topography regions; performing OPC on the design data file with topography information from the topography analysis, wherein the OPC adjusts patterns of the mask levels based on defocus values associated with topography regions, the OPC produces an adjusted design data file; generating a mask set from the adjusted design data file; and processing a wafer to form devices using the mask set.