| 发明名称 |
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer. |
| 申请公布号 |
US2014264390(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414204728 |
申请日期 |
2014.03.11 |
| 申请人 |
Epistar Corporation |
发明人 |
LIU Ai-Sen |
| 分类号 |
H01L33/02;H01L21/02 |
主分类号 |
H01L33/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an epitaxial device, comprising:
providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen form the first transition layer to from a hollow component inside the first transition layer. |
| 地址 |
Hsinchu TW |
