Method and system for ultra miniaturized packages for transient voltage suppressors

摘要

A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The transient voltage suppressor (TVS) assembly includes a semiconductor die including a contact surface on a single side of the die, the die further including a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity, at least a TVS device including a plurality of wide band gap semiconductor layers formed on the substrate; a first electrode coupled in electrical contact with the TVS device and extending to the contact surface, and a second electrode electrically coupled to the substrate extending to the contact surface.

主权项

1. A transient voltage suppressor (TVS) assembly having a semiconductor die comprising a contact surface on a single side of said die, said die further comprising:
a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity; at least a TVS device comprising a plurality of wide band gap semiconductor layers formed on said substrate; a first electrode coupled in electrical contact with said TVS device and extending to said contact surface; a second electrode electrically coupled to said substrate extending to said contact surface, further comprising a beveled sidewall forming an angle of approximately five degrees to approximately ninety degrees with respect to an interface between adjacent contacting layers; a second layer of the first wide band gap semiconductor or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with said substrate, the second polarity being different than the first polarity; and a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with said second layer, said second layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.