The invention concerns a wideband optical gate in the domain of terahertz (far infrared wavelengths). It comprises a first optical source (2) emitting a first beam (FTHz) in said terahertz domain, a first semiconductor material plate (1) illuminated by said terahertz beam and a second optical source (3) emitting a second beam (FIR) at a wavelength enabling the first semiconductor material plate (1) to be saturated and rendered reflecting at the terahertz wavelength. The pulses (FIR1, FIR2) of the second beam are delayed by a time that can be adjusted with respect to pulses (THz1, THz2, THz3) in the first beam. The invention also concerns a system for measuring terahertz signals as well as a terahertz generator. The invention is applicable to systems for measuring terahertz signals and terahertz generators.
申请公布号
CA2582448(C)
申请公布日期
2014.09.16
申请号
CA20052582448
申请日期
2005.10.05
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE