Semiconductor device comprising self-aligned contact elements

摘要

When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.

主权项

1. A method, comprising:
forming a contact element laterally adjacent to a gate electrode structure so as to connect to one of a drain region and source region formed in an active region of a semiconductor device, said gate electrode structure comprising a placeholder electrode material covered by a dielectric cap layer; wherein forming said contact element comprises: forming a dielectric material above said drain and source regions and laterally adjacent to said gate electrode structure; forming a contact opening in said dielectric material so as to expose at least a portion of said one of a drain region and a source region; forming a sacrificial fill material in said contact opening; performing a common removal process to remove said dielectric cap layer and a portion of said sacrificial fill material so as to expose a surface of said placeholder material; and replacing said placeholder electrode material at least with a metal-containing electrode material in the presence of said contact element.