发明名称 |
PATTERNING PROCESS AND RESIST COMPOSITION |
摘要 |
A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3−R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom. |
申请公布号 |
US2014255843(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201414182682 |
申请日期 |
2014.02.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Kobayashi Tomohiro;Katayama Kazuhiro;Kumaki Kentaro;Lin Chuanwen;Ohashi Masaki;Fukushima Masahiro |
分类号 |
G03F7/30;G03F7/038 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
1. A process for forming a negative pattern, comprising the steps of coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking the coating to form a resist film, exposing the resist film to high-energy radiation to define exposed and unexposed regions, baking, and developing the resist film in a developer comprising an organic solvent to selectively dissolve the unexposed region of resist film,
said photoacid generator (B) having the general formula (1):
R1—COOC(CF3)2—CH2SO3−R2R3R4S+ (1)wherein R1 is a straight, branched or cyclic, monovalent hydrocarbon group of 1 to 50 carbon atoms which may contain a heteroatom, R2, R3 and R4 are each independently a substituted or unsubstituted, straight or branched C1-C10 alkyl, alkenyl or oxoalkyl group or a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, or at least two of R2, R3 and R4 may bond together to form a ring with the sulfur atom. |
地址 |
Tokyo JP |