| 摘要 |
A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship. |
| 主权项 |
1. A surface emitting laser comprising:
a lower reflector; a first spacer layer; an active layer; a second spacer layer composed of a semiconductor material; a gap section formed of at least one of vacuum and gas; an upper reflector; and a control mechanism, wherein the lower reflector, the first spacer layer, the active layer, the second spacer layer, the gap section, and the upper reflector are disposed in the written order, wherein the control mechanism changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section, and wherein an optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a relationship according to expression (1):
(ma/2+ 3/16)λ0≦neff×d≦(ma/2+⅜)λ0 (1) where, in expression (1), ma denotes an integer of 2 or larger, and λ0 denotes a central wavelength of a reflection wavelength band of the upper reflector or the lower reflector. |
