| 摘要 |
PROBLEM TO BE SOLVED: To provide a high side switch circuit that can protect not only a high side switch but also circuits connected to the high side switch when an overcurrent is detected in the high side switch, and an apparatus including the high side switch circuit. SOLUTION: A gate voltage step-down section 31 steps down a gate voltage of an MOS transistor 15 from a first voltage to a third voltage between the first voltage and a second voltage at a first time rate of change in response to a current limitation signal from an overcurrent detection section 20. This increases an on resistance of the MOS transistor 15 beyond that of the MOS transistor 15 in a completely on state. After the gate voltage drops to the third voltage, a gate voltage step-down section 32 steps down the gate voltage from the third voltage to the second voltage at a second time rate of change. The first time rate of change is larger than the second time rate of change. COPYRIGHT: (C)2012,JPO&INPIT |
