Hybrid thin film transistor, manufacturing method thereof and display panel having the same

摘要

A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.

主权项

1. A hybrid thin film transistor, comprising:
a first thin film transistor, comprising:
a first gate, a first source and a first drain; anda first semiconductor layer, disposed between the first gate, the first source and the first drain, wherein the first semiconductor layer includes a crystallized silicon layer and a non-doped silicon layer disposed on the crystallized silicon layer, the crystallized silicon layer comprises a poly-silicon material or a microcrystalline silicon material, and the non-doped silicon layer comprises a microcrystalline silicon material or an amorphous silicon material; a second thin film transistor, comprising:
a second gate, a second source and a second drain; anda second semiconductor layer, disposed between the second gate, the second source and the second drain, wherein the second semiconductor layer includes a metal oxide semiconductor layer; and an insulating layer, disposed on the first gate and the second gate, wherein both of the second source and the second drain are disposed between the metal oxide semiconductor layer and the insulating layer, and the first source, the first drain, the second source and the second drain are directly in contact with the insulating layer.