发明名称 |
INTEGRATED OPTICAL STRUCTURE COMPRISING AN OPTICAL ISOLATOR |
摘要 |
An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure. |
申请公布号 |
US2014247477(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201214349394 |
申请日期 |
2012.10.17 |
申请人 |
ALCATEL-LUCENT |
发明人 |
Duan Guang-Hua;Brillouet Francois;Gentner Jean-Louis |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated optical structure comprising
at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with at least one optical isolator disposed between a SOI base and the SOA optical amplifier's waveguide, comprising a magneto-optical layer, wherein the magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. |
地址 |
Paris FR |