发明名称 INTEGRATED OPTICAL STRUCTURE COMPRISING AN OPTICAL ISOLATOR
摘要 An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.
申请公布号 US2014247477(A1) 申请公布日期 2014.09.04
申请号 US201214349394 申请日期 2012.10.17
申请人 ALCATEL-LUCENT 发明人 Duan Guang-Hua;Brillouet Francois;Gentner Jean-Louis
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项 1. An integrated optical structure comprising at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with at least one optical isolator disposed between a SOI base and the SOA optical amplifier's waveguide, comprising a magneto-optical layer, wherein the magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer.
地址 Paris FR