发明名称 |
SYNTHESIS OF TRANSITION METAL DISULFIDE LAYERS |
摘要 |
Aromatic molecules are seeded on a surface of a growth substrate; and a layer {e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate. |
申请公布号 |
WO2014134524(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
WO2014US19575 |
申请日期 |
2014.02.28 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
KONG, JING;LI, LAIN-JONG;LEE, YI-HSIEN |
分类号 |
C23C16/00;C25D13/02 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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