发明名称 SYNTHESIS OF TRANSITION METAL DISULFIDE LAYERS
摘要 Aromatic molecules are seeded on a surface of a growth substrate; and a layer {e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
申请公布号 WO2014134524(A1) 申请公布日期 2014.09.04
申请号 WO2014US19575 申请日期 2014.02.28
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 KONG, JING;LI, LAIN-JONG;LEE, YI-HSIEN
分类号 C23C16/00;C25D13/02 主分类号 C23C16/00
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