发明名称 Method of forming dielectric layer with a dielectric composition
摘要 An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.
申请公布号 US8821962(B2) 申请公布日期 2014.09.02
申请号 US201012957461 申请日期 2010.12.01
申请人 Xerox Corporation 发明人 Wu Yiliang;Wang Yulin;Liu Ping;Hu Nan-Xing;Wigglesworth Anthony James
分类号 B05D5/12;B05D3/02;H01L51/05;H01L51/00 主分类号 B05D5/12
代理机构 Fay Sharpe LLP 代理人 Fay Sharpe LLP
主权项 1. A process for fabricating an electronic device having a dielectric layer on a substrate, comprising: depositing a dielectric composition on the substrate, the dielectric composition comprising a dielectric material and a low surface tension additive; optionally heating the dielectric composition, forming the dielectric layer on the substrate; wherein the low surface tension additive is a polyacrylate modified hydroxyl functional polysiloxane.
地址 Norwalk CT US