发明名称 |
Method of forming dielectric layer with a dielectric composition |
摘要 |
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. |
申请公布号 |
US8821962(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201012957461 |
申请日期 |
2010.12.01 |
申请人 |
Xerox Corporation |
发明人 |
Wu Yiliang;Wang Yulin;Liu Ping;Hu Nan-Xing;Wigglesworth Anthony James |
分类号 |
B05D5/12;B05D3/02;H01L51/05;H01L51/00 |
主分类号 |
B05D5/12 |
代理机构 |
Fay Sharpe LLP |
代理人 |
Fay Sharpe LLP |
主权项 |
1. A process for fabricating an electronic device having a dielectric layer on a substrate, comprising:
depositing a dielectric composition on the substrate, the dielectric composition comprising a dielectric material and a low surface tension additive; optionally heating the dielectric composition, forming the dielectric layer on the substrate; wherein the low surface tension additive is a polyacrylate modified hydroxyl functional polysiloxane. |
地址 |
Norwalk CT US |