Substrate provided with semiconductor films and manufacturing method thereof

摘要

A plurality of single crystal semiconductor substrates having a rectangular shape are disposed on a tray. Depression portions are provided in the tray so that the single crystal semiconductor substrates can fit in. The single crystal semiconductor substrates disposed on the tray are doped with hydrogen ions, so that damaged regions are formed at a desired depth. A bonding layer is formed on surfaces of the single crystal semiconductor substrates. The plurality of single crystal semiconductor substrates in each of which the damaged region is formed and on which the bonding layer is formed are disposed on the tray and bonded to the base substrate. By heat treatment, the single crystal semiconductor substrates are separated at the damaged regions; accordingly, a plurality of single crystal semiconductor layers which are thinned are formed over the base substrate.

主权项

1. A manufacturing method of a substrate provided with semiconductor films, comprising:
preparing a base substrate and a plurality of single crystal semiconductor substrates; forming on a first tray, a damaged region at a desired depth of each of the plurality of single crystal semiconductor substrates by irradiating the plurality of single crystal semiconductor substrates with ions, an insulating layer over an upper surface of each of the plurality of single crystal semiconductor substrates, and a bonding layer over the insulating layer; disposing on a second tray, the plurality of single crystal semiconductor substrates with the damaged region, the insulating layer, and the bonding layer; making the plurality of single crystal semiconductor substrates in close contact with the base substrate with the bonding layer interposed therebetween, so that the base substrate and the plurality of single crystal semiconductor substrates are bonded to each other; and generating cracks in the damaged region by heating the plurality of single crystal semiconductor substrates, so that a plurality of single crystal semiconductor layers separated from the plurality of single crystal semiconductor substrates are formed over the base substrate, wherein each of the plurality of single crystal semiconductor substrates has a length of a long side which is n times a length of a side of one shot of a light-exposing region of a reduced projection exposure apparatus (n is an arbitrary positive integer, and n≧1), and wherein each of the first tray and the second tray is a plate-like member provided with a plurality of depression portions which have a rectangular shape.