Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device includes forming a gate dielectric layer comprising an oxide, and at least one conductive layer on a substrate, forming a mask on the conductive layer and patterning the at least one conductive layer by etching the at least one conductive layer using the mask as an etch mask to thereby form a gate electrode, wherein the oxide of the gate dielectric layer and the material of the at least one conductive layer are selected such that a byproduct of the etching of the at least one conductive layer, formed on the mask during the etching of the at least one conductive layer, comprises an oxide having a higher etch rate with respect to an etchant than the oxide of the gate dielectric layer.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a gate dielectric layer comprising an oxide, and at least one conductive layer on a substrate; forming a mask on the conductive layer; patterning the at least one conductive layer by etching the at least one conductive layer using the mask as an etch mask to thereby form a gate electrode, wherein a byproduct of the etching of the at least one conductive layer comprises an oxide and is formed on the mask, and the oxide of the gate dielectric layer and a material of the at least one conductive layer are selected such that the oxide constituting the byproduct has a higher etch rate with respect to an etchant than the oxide of the gate dielectric layer; using the etchant to remove the byproduct from the mask; and subsequently conformally forming at least one capping layer on the substrate that covers the gate electrode and the mask.