ESD protective element and plasma display including the ESD protective element

摘要

The present invention mainly provides an ESD protective element which can be built in high voltage semiconductor integrated circuit devices without increasing the chip area. An ESD protective element according to one embodiment has a construction comprising a semiconductor layer, a first region of a first conduction type formed in the semiconductor layer, a first region of a second conduction type formed in the semiconductor layer away from the first region of the first conduction type, a second region of the second conduction type formed in the first region of the second conduction type and has a higher impurity concentration than it, and a second region of the first conduction type formed in the second region of the second conduction type and has a high impurity concentration. The first and second regions of the second conduction type are in an electrically floating state.

主权项

1. An ESD protective element providing:
a semiconductor layer including: a first semiconductor region of a first conduction type formed in said semiconductor layer; a first semiconductor region of a second conduction type formed in said semiconductor layer in proximity or next to said first semiconductor region of the first conduction type; a second semiconductor region of the second conduction type formed in said first semiconductor region of the second conduction type; and a second semiconductor region of the first conduction type formed in said second semiconductor region of the second conduction type and spaced apart from said first semiconductor region of the first conduction type, wherein an impurity concentration in said second semiconductor region of the second conduction type is higher than an impurity concentration in said first semiconductor region of the second conduction type, and said first semiconductor region of the second conduction type and said second semiconductor region of the second conduction type have no electrode connected.