发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which improves an etching rate and inhibits the deterioration of an etching selection ratio. ! SOLUTION: A substrate processing apparatus includes: a phosphoric acid supply device which supplies a phosphoric acid solution to an upper surface of a substrate W held by a spin chuck 5 thereby forming a liquid film of the phosphoric acid solution which covers the entire upper surface of the substrate W; a covering member 62 which is disposed along the liquid film of the phosphoric acid solution and covers the upper surface of the substrate W with a covering surface 66 larger than the substrate W in a plane view through the liquid film of the phosphoric acid solution; a heater 10 which heats the substrate W in a state that the liquid film of the phosphoric acid solution is held on the substrate W; and a pure water supply device 36 which supplies pure water to the liquid film of the phosphoric acid solution. ! COPYRIGHT: (C)2014,JPO&INPIT
申请公布号 JP2014157935(A) 申请公布日期 2014.08.28
申请号 JP20130028124 申请日期 2013.02.15
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HINODE DAIKI ; OTA TAKASHI ; FUJIWARA NAOKI
分类号 H01L21/306 主分类号 H01L21/306
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