发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which improves an etching rate and inhibits the deterioration of an etching selection ratio. ! SOLUTION: A substrate processing apparatus includes: a phosphoric acid supply device which supplies a phosphoric acid solution to an upper surface of a substrate W held by a spin chuck 5 thereby forming a liquid film of the phosphoric acid solution which covers the entire upper surface of the substrate W; a covering member 62 which is disposed along the liquid film of the phosphoric acid solution and covers the upper surface of the substrate W with a covering surface 66 larger than the substrate W in a plane view through the liquid film of the phosphoric acid solution; a heater 10 which heats the substrate W in a state that the liquid film of the phosphoric acid solution is held on the substrate W; and a pure water supply device 36 which supplies pure water to the liquid film of the phosphoric acid solution. ! COPYRIGHT: (C)2014,JPO&INPIT |
申请公布号 |
JP2014157935(A) |
申请公布日期 |
2014.08.28 |
申请号 |
JP20130028124 |
申请日期 |
2013.02.15 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
HINODE DAIKI ; OTA TAKASHI ; FUJIWARA NAOKI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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