| 发明名称 | Method of forming semiconductor device with multiple level patterning | ||
| 摘要 | A method for forming a semiconductor device is provided including processing a wafer having a target material, forming a multilevel photoresist structure having a protection layer over the target material, and forming a multilevel recess in the target material with the multilevel photoresist structure. | ||
| 申请公布号 | US8815748(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US200711623036 | 申请日期 | 2007.01.12 |
| 申请人 | Advanced Micro Devices, Inc. | 发明人 | Wallow Thomas Ingolf;Kim Ryoung-han;Kye Jongwook;Levinson Harry Jay |
| 分类号 | H01L21/302;H01L21/027;G03F7/40;H01L21/311;G03F7/00 | 主分类号 | H01L21/302 |
| 代理机构 | Farjami & Farjami LLP | 代理人 | Farjami & Farjami LLP |
| 主权项 | 1. A method for forming a semiconductor device comprising: processing a wafer having a target material; forming a multilevel photoresist structure having a protection layer over the target material; and forming a multilevel recess in the target material with the multilevel photoresist structure; wherein the protection layer is formed by creating a stabilization material over the target material wherein the stabilization material has portions that do not react with the target material; and removing the portions of the stabilization material that do not react with the target material. | ||
| 地址 | Sunnyvale CA US | ||