| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-receiving element that allows providing a device excellent in carrier extraction efficiency.SOLUTION: A light-receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. The superlattice semiconductor layer has two or more superlattice structures in which barrier layers and quantum dot layers including a quantum dot are alternately and repeatedly stacked. The two or more superlattice structures are different from each other in at least one of the shape of the quantum dot, the material of the quantum dot, the thickness of the barrier layer, and the material of the barrier layer. |
