| 摘要 |
A light emitting device according to an embodiment includes a light emitting structure which includes a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the active layer; a first electrode which is arranged under the light emitting structure and is electrically connected to the first conductivity type semiconductor layer; a second electrode which is arranged under the light emitting structure and is electrically connected to the second conductivity type semiconductor layer; a first contact part which penetrates the light emitting structure and has a first region which is electrically connected to the first electrode and a second region which is in contact with the upper surface of the first conductivity type semiconductor layer; and an insulating ion injection layer which is arranged around the first contact part and insulates the first contact part and the second conductivity type semiconductor layer. |
