| 摘要 |
PROBLEM TO BE SOLVED: To adiabatically expand etching gas in a mild pressure condition to etch silicon.SOLUTION: In a dry etching method etching a silicon layer to be processed in a processing chamber, etching gas containing iodine heptafluoride is supplied at supply pressure within a pressure range from 66 kPa to 0.5 MPa from a supply source, the etching gas retained in the pressure range is introduced in a processing chamber where the pressure has been reduced below the supply pressure, and the silicon layer is etched. |
