| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
The present invention includes a semiconductor substrate and a back electrode (a back multilayer electrode in the preferred embodiment) provided on a back surface of the semiconductor substrate. A rough source pattern is formed in a peripheral edge portion of the back surface of the semiconductor substrate which faces the back multilayer electrode. |
| 申请公布号 |
US2014232004(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201314062619 |
申请日期 |
2013.10.24 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YOSHIURA Yasuhiro;TARUTANI Masayoshi;OTSUKI Eiko |
| 分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; and a back electrode provided on a back surface of said semiconductor substrate; wherein a rough surface pattern is formed in a peripheral edge portion of said back surface of said semiconductor substrate which faces said back electrode. |
| 地址 |
Tokyo JP |
