HIGH-FREQUENCY AMPLIFIER MODULE AND HIGH-FREQUENCY AMPLIFIER MODULE UNIT

摘要

A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.

主权项

1. A high-frequency amplifier module, comprising:
a silicon substrate; a gallium arsenide substrate; a driver-stage amplifier that includes a plurality of amplifiers arranged in multi-stages and amplifies a signal input from an input terminal; a final-stage amplifier that further amplifies the amplified signal amplified by the driver-stage amplifier and outputs the further amplified signal to an output terminal; a bypass path with an end being connected to an input side of the driver-stage amplifier and another end being connected to an output side of the final-stage amplifier; and a bypass amplifier that is arranged in the bypass path, wherein the driver-stage amplifier is fabricated on the silicon substrate, and the final-stage amplifier is fabricated on the gallium arsenide substrate, and at least part of the bypass amplifier is fabricated on the silicon substrate.