| 摘要 |
A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2. |
| 主权项 |
1. A light emitting diode, comprising:
a sapphire substrate; a n-type semiconductor layer disposed on the sapphire substrate; an active layer having a defect density DD, wherein DD≧2×107/cm3, the active layer is disposed on a portion of the n-type semiconductor layer, and a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, the active layer comprising i quantum barrier layers and (i−1) quantum wells, each of the quantum wells is disposed between any two quantum barrier layers, and i is a natural number greater than or equal to 2, wherein a n-type dopant is doped in at least k layers of the quantum barrier layers, k being a natural number greater than or equal to 1, when i is an even number, k≧i/2, and when i is an odd number, k≧(i−1)/2; a p-type semiconductor layer disposed on the active layer; and a first electrode and a second electrode, wherein the first electrode is disposed on a portion of the n-type semiconductor layer, and the second electrode is disposed on a portion of the p-type semiconductor layer, wherein the doping concentration of the each of the k quantum barrier layers counting sequentially from the n-type to the p-type semiconductor layer side are C1, C2, . . . Ck, where Ck<Ck-1. |
