发明名称 |
Semiconductor light-emitting element and method for producing the same |
摘要 |
A semiconductor light-emitting element includes, a first semiconductor layer (120), a second semiconductor layer (140), a light-emitting layer (130) provided between the first semiconductor layer and the second semiconductor layer, a first electrode (160) connected to the first semiconductor layer, and a second electrode (150) provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void (210) having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. |
申请公布号 |
EP2101363(A3) |
申请公布日期 |
2014.08.20 |
申请号 |
EP20090250663 |
申请日期 |
2009.03.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIROSHI, KATSUNO;OHBA, YASUO;KEI, KANEKO |
分类号 |
H01L33/00;H01L33/32;H01L33/36;H01L33/38;H01L33/40;H01L33/50 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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