发明名称 |
Vacuum plasma processor including control in response to DC bias voltage |
摘要 |
<p>A plasma processor chamber includes a bottom electrode (13) and a top electrode assembly (14) having a center electrode (16,36) surrounded by a grounded electrode (34,42). RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.</p> |
申请公布号 |
EP2287885(A3) |
申请公布日期 |
2014.08.20 |
申请号 |
EP20100159940 |
申请日期 |
2005.05.25 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
DHINDSA, RAJINDER;KOZAKEVICH, FELIX;TRUSSELL, DAVE |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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