Method of manufacturing semiconductor device

摘要

In a method of manufacturing of a semiconductor device according to an embodiment, an inspection transistor is subjected to silicidation and subsequently a characteristic of the inspection transistor is measured after the inspection transistor and a product transistor on a substrate are subjected to an annealing process. Thereafter, based on the measured characteristic, a characteristic adjustment annealing process to make a characteristic of the product transistor close to a desired characteristic is performed, and then the product transistor is subjected to silicidation.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(A) performing an annealing process that activates a source and a drain of an inspection transistor and a source and a drain of a product transistor, both of which are formed on a semiconductor substrate; (B) performing silicidation on a gate, the source, and the drain of the inspection transistor having undergone the (A) performing; (C) measuring a characteristic of the inspection transistor having undergone the (B) performing; (D) performing a characteristic adjustment annealing process that makes a characteristic of a product transistor close to a desired characteristic, based on a difference between the desired characteristic and the characteristic measured by the (C) measuring; and (E) performing silicidation on a gate, the source, and the drain of the product transistor having undergone the (D) performing.