发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes: a substrate having first and second surfaces, the first surface comprising first and second regions; a first semiconductor chip covering the first region; a first seal covering the second region and the first semiconductor chip; and a second seal covering the second surface.
申请公布号 US8810047(B2) 申请公布日期 2014.08.19
申请号 US200912588360 申请日期 2009.10.13
申请人 PS4 Luxco S.A.R.L. 发明人 Watanabe Mitsuhisa;Watanabe Fumitomo
分类号 H01L23/29 主分类号 H01L23/29
代理机构 McGinn IP Law Group, PLLC 代理人 McGinn IP Law Group, PLLC
主权项 1. A semiconductor device comprising: a substrate including a first surface, a second surface opposite to the first surface, and a plurality of lands formed on the second surface, and the substrate further including a solder resist film formed on the second surface so as to expose the plurality of lands; a semiconductor chip mounted over the first surface of the substrate, the semiconductor chip being electrically connected to the plurality of lands; a first seal provided over the first surface of the substrate to cover the semiconductor chip; a plurality of conductors provided on the plurality of lands of the substrate, respectively; a second seal provided over substantially an entirety of the solder resist film of the substrate so that parts of the plurality of conductors expose from the second seal; and a plurality of solder balls connected to the parts of the plurality of conductors, wherein the first seal comprises first and second edges that are substantially aligned with first and second edges of the second seal, respectively, and the second seal is continuously formed between the first and second edges of the second seal, and wherein the plurality of conductors have a thickness substantially equal to a thickness of the second seal.
地址 Luxembourg LU