Method for fabricating a semiconductor component based on GaN

摘要

A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

主权项

1. A thin-film light emitting-diode comprising:
a carrier comprising germanium; GaN-based layers comprising an active layer sequence for emitting radiation, wherein an outer surface of the GaN-based layers is roughened; a reflector configured to reflect the radiation emitted by the active layer sequence, wherein a contact layer is arranged between the reflector and the GaN-based layers; and a contact surface configured to contact-connect the active layer sequence, wherein the reflector is arranged between the carrier and the GaN-based layers; and wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the carrier.