Device structures compatible with fin-type field-effect transistor technologies

摘要

Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material.

主权项

1. A device structure comprising:
a first fin comprised of a first semiconductor material; a second fin comprised of the first semiconductor material, the second fin adjacent to the first fin to define a gap separating the first fin from the second fin; and a first layer comprised of a second semiconductor material, the first layer positioned in the gap between the first fin and the second fin, wherein the first fin is a first electrode of the device structure and the second fin is a second electrode of the device structure.