发明名称 |
FAILURE RECOVERY MEMORY DEVICES AND METHODS |
摘要 |
Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an error recovery device at an end of the chain. In one configuration shown, the serial chain of memory devices includes a chain of devices where each device is a stacked die memory device. Methods are described that show using the error recovery device in write operations and data recovery operations. |
申请公布号 |
US2014229762(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201414255510 |
申请日期 |
2014.04.17 |
申请人 |
Micron Technology, Inc. |
发明人 |
Resnick David R. |
分类号 |
G06F11/07 |
主分类号 |
G06F11/07 |
代理机构 |
|
代理人 |
|
主权项 |
1. A memory system, comprising:
a plurality of memory devices in a serial chain each memory device in the number of memory devices including:
a request input path configured for serial communication through the memory device;a response output path configured for serial communication through the memory device;a first logic block coupled to the input path to form error recovery data;a second logic block coupled to the output path to recover data using the error recovery data; anda selectable mode to assign any chosen memory device in the plurality of memory devices as an error recovery device. |
地址 |
Boise ID US |