发明名称 FAILURE RECOVERY MEMORY DEVICES AND METHODS
摘要 Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an error recovery device at an end of the chain. In one configuration shown, the serial chain of memory devices includes a chain of devices where each device is a stacked die memory device. Methods are described that show using the error recovery device in write operations and data recovery operations.
申请公布号 US2014229762(A1) 申请公布日期 2014.08.14
申请号 US201414255510 申请日期 2014.04.17
申请人 Micron Technology, Inc. 发明人 Resnick David R.
分类号 G06F11/07 主分类号 G06F11/07
代理机构 代理人
主权项 1. A memory system, comprising: a plurality of memory devices in a serial chain each memory device in the number of memory devices including: a request input path configured for serial communication through the memory device;a response output path configured for serial communication through the memory device;a first logic block coupled to the input path to form error recovery data;a second logic block coupled to the output path to recover data using the error recovery data; anda selectable mode to assign any chosen memory device in the plurality of memory devices as an error recovery device.
地址 Boise ID US