MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES

摘要

A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.

主权项

1. A method of driving a nonvolatile memory device, comprising a plurality of strings, each string formed by penetrating plate-shaped word lines stacked on a substrate, the method comprising:
configuring the word lines of a string in a plurality of zones based on zone configuration information; and applying zone voltages to the zones, respectively, wherein the zone configuration information is varied according to a mode of operation.