| 发明名称 |
GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME |
| 摘要 |
This invention discloses a gallium nitride based semiconductor power device disposed in a semiconductor substrate. The power device comprises a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with doped gallium-based epitaxial layer therein. |
| 申请公布号 |
US2014225120(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201313763649 |
申请日期 |
2013.02.09 |
| 申请人 |
Zhu Tinggang |
发明人 |
Zhu Tinggang |
| 分类号 |
H01L29/20;H01L29/872 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gallium nitride based semiconductor power device comprising:
a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with P-doped gallium-based epitaxial layer therein. |
| 地址 |
Cupertino CA US |
