DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK

摘要

This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

主权项

1. A method for manufacturing a trenched semiconductor power device comprising:
opening a plurality of trenches from a top surface of a semiconductor substrate and forming a gate insulation layer on sidewalls and bottom surface of said trenches; forming an implanting-ion block above said top surface in a mesa area at a distance away from said trenches for blocking body implanting ions and source ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced; and implanting body ions into said semiconductor substrate with said implanting-ion block blocking said mesa area and diffusing said body ions into a body region with said body region separated as two separated body regions disposed on two opposite sides of said trenches.